A high performance 50 nm PMOSFET using decaborane (B/sub 10/H/sub 14/) ion implantation and 2-step activation annealing process-Reference-Cited by-同舟云学术

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A high performance 50 nm PMOSFET using decaborane (B/sub 10/H/sub 14/) ion implantation and 2-step activation annealing process

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Container-title:International Electron Devices Meeting. IEDM Technical Digest
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Author:

Goto K.-I.,Matsuo J.,Tada Y.,Tanaka T.,Momiyama Y.,Sugii T.,Yamada I.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/5237/14153/00650426.pdf?arnumber=650426

Cited by 43 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of ion dose ratio on multilevel energy smoothing model of gas cluster;Acta Physica Sinica;2021

2. Molecular dynamics simulations of cluster impacts on solid targets: implantation, surface modification, and sputtering;Journal of Computational Electronics;2013-09-12

3. Vacancy-Type Defects Introduced by Gas Cluster Ion-Implantation on Si Studied by Monoenergetic Positron Beams;Japanese Journal of Applied Physics;2012-10-23

4. Dependence of energy per molecule on sputtering yields with reactive gas cluster ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-10

5. Size effects of gas cluster ions on beam transport, amorphous layer formation and sputtering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-05

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