MOSFETs with 9 to 13 A thick gate oxides-Reference-Cited by-同舟云学术

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MOSFETs with 9 to 13 A thick gate oxides

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Container-title:International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)
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Author:

Krishnan M.S.,Cheng L.,Tsu-Jae King ,Bokor J.,Chenming Hu

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6669/17838/00823888.pdf?arnumber=823888

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1. Effect of Remote-Surface-Roughness Scattering on Electron Mobility in MOSFETs with High-k Dielectrics;ECS Transactions;2019-12-17

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3. The effect of remote Coulomb scattering on electron mobility in La2O3gate stacked MOSFETs;Semiconductor Science and Technology;2012-03-14

4. Experimental Method to Extract Effective Channel Length of Nanoscale n-MOSFETs;IEEE Electron Device Letters;2009-11

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