0.5-μm-pitch copper-dual-damascene metallization using organic SOG (k=2.9) for 0.18-μm CMOS applications-Reference-Cited by-同舟云学术

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0.5-μm-pitch copper-dual-damascene metallization using organic SOG (k=2.9) for 0.18-μm CMOS applications

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Container-title:International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)
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Author:

Fukuda T.,Ohshima T.,Aoki H.,Maruyama H.,Miyazaki H.,Konishi N.,Fukada S.,Yunogami T.,Hotta S.,Maekawa A.,Hinode K.,Nojiri K.,Tokunaga T.,Kobayashi N.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6669/17838/00824229.pdf?arnumber=824229

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma sealing of a low-K dielectric polymer;Microelectronic Engineering;2004-10

2. Direct Resist Removal Process from Copper-Exposed Vias for Low-Parasitic-Capacitance Interconnects;Journal of The Electrochemical Society;2001

3. Oxygen Plasma Resistance of Low-k Organosilica Glass Films;Electrochemical and Solid-State Letters;2001

4. Heat and Moisture Resistance of Siloxane-Based Low-Dielectric-Constant Materials;Journal of The Electrochemical Society;2001

5. Stopper-less hybrid low-k/Cu DD structure fabrication combined with low-k CMP;Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519)

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