Shallow source/drain extensions for pMOSFETs with high activation and low process damage fabricated by plasma doping-Reference-Cited by-同舟云学术

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Shallow source/drain extensions for pMOSFETs with high activation and low process damage fabricated by plasma doping

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Container-title:International Electron Devices Meeting. IEDM Technical Digest
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Author:

Takase M.,Yamashita K.,Hori A.,Mizuno B.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/5237/14153/00650427.pdf?arnumber=650427

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface chemical structure and doping characteristics of boron-doped Si nanowires fabricated by plasma doping;Applied Surface Science;2017-10

2. Plasma doping (PD) for ultra-shallow junction;Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08);2008-05

3. Highly Manufacturable Double-Gate FinFET With Gate-Source/Drain Underlap;IEEE Transactions on Electron Devices;2007-06

4. Physical and technological limitations of NanoCMOS devices to the end of the roadmap and beyond;The European Physical Journal Applied Physics;2006-12

5. CMOS DEVICES ARCHITECTURES AND TECHNOLOGY INNOVATIONS FOR THE NANOELECTRONICS ERA;Frontiers in Electronics;2006-08

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