Recent progress of crystal growth, conductivity control and light emitters of group III nitride semiconductors-Reference-Cited by-同舟云学术

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Recent progress of crystal growth, conductivity control and light emitters of group III nitride semiconductors

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Container-title:International Electron Devices Meeting. Technical Digest
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Author:

Akasaki I.,Amano H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/4251/12029/00553574.pdf?arnumber=553574

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of defects evolution in GaN layers grown by metal-organic chemical vapor deposition;Journal of Applied Physics;2008-03-15

2. Growth optimization for high quality GaN films grown by metal-organic chemical vapor deposition;MRS Proceedings;2008

3. Group III Nitrides;Springer Handbook of Electronic and Photonic Materials;2006

4. A Novel Two-Step Method for Improvement of MOVPE Grown InN Film on GaP(111)B Substrate;physica status solidi (b);2001-11

5. III–nitrides: Growth, characterization, and properties;Journal of Applied Physics;2000-02

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