High transconductance 0.1 mu m pMOSFET-Reference-Cited by-同舟云学术

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High transconductance 0.1 mu m pMOSFET

Published:1992 Issue: Volume: Page:
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Container-title:International Technical Digest on Electron Devices Meeting
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Author:

Taur ,Cohen ,Wind ,Lii ,Hsu ,Quinlan ,Chang ,Buchanan ,Agnello ,Mii ,Reeves ,Acovic ,Kesan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx2/1032/7499/00307502.pdf?arnumber=307502

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extremely high transconductance Ge/Si/sub 0.4/Ge/sub 0.6/ p-MODFET's grown by UHV-CVD;IEEE Electron Device Letters;2000-03

2. p–n junctions formed by BF2 ion implantation and laser annealing;Solid-State Electronics;1999-03

3. High-performance 0.1 [micro sign]m gate-length Ge/Sio0.4Ge0.6 p-channel MODFETs;Electronics Letters;1999

4. Selective laser annealing (SELA) used in the fabrication of Sub-0.1μm MOSFETs;Solid-State Electronics;1998-04

5. Counterdoped very shallow p+/n junctions obtained by B and Sb implantation and codiffusion in Si;Journal of Applied Physics;1998-02

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