High Al-content AlGaN/GaN HEMTs on SiC substrates with very high power performance-Reference-Cited by-同舟云学术

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High Al-content AlGaN/GaN HEMTs on SiC substrates with very high power performance

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Container-title:International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)
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Author:

Wu Y.-F.,Kapolnek D.,Ibbetson J.,Zhang N.-Q.,Parikh P.,Keller B.P.,Mishra U.K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6669/17838/00824300.pdf?arnumber=824300

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices;Journal of Physics: Materials;2024-03-08

2. Performance improvement of Al0.3Ga0.7N/AlN/GaN HEMTs using Nitrogen pre-treated Si3N4 passivation;Microelectronic Engineering;2021-09

3. Performance Analysis of AC and DC Characteristics of AlGaN/GaN HEMT at Various Temperatures;Transactions on Electrical and Electronic Materials;2018-03-16

4. Lateral GaN Devices for Power Applications (from kHz to GHz);Power Electronics and Power Systems;2016-09-09

5. Structural investigation of AlInN/AlN/GaN heterostructures;Journal of Materials Science: Materials in Electronics;2015-11-23

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