Body charge related transient effects in floating body SOI NMOSFETs-Reference-Cited by-同舟云学术

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Body charge related transient effects in floating body SOI NMOSFETs

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Container-title:Proceedings of International Electron Devices Meeting
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Author:

Gautier J.,Jenkins K.A.,Sun J.Y.-C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/3584/10696/00499297.pdf?arnumber=499297

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Memory effects in 45-nm PDSOI MOSFETs at Cryogenic Temperatures for Quantum Computing Applications;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

2. A Comparative Analysis of Drain Current in Nanoscale MOSFET variants valid for Low Power Digital Applications;2024 International Conference on Integrated Circuits and Communication Systems (ICICACS);2024-02-23

3. History effect investigation in SOI MOSFET for minimizing impact on circuit performance;2021 International Symposium on Devices, Circuits and Systems (ISDCS);2021-03-03

4. Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors;Japanese Journal of Applied Physics;2011-04-20

5. Large SET Duration Broadening in a Fully-Depleted SOI Technology—Mitigation With Body Contacts;IEEE Transactions on Nuclear Science;2010-08

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