Simulation of two-dimensional implantation profiles with a large concentration range in crystalline silicon using an advanced Monte Carlo method
Author:
Hobler G.,Potzl H.
Cited by
3 articles.
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1. Novel diffusion-less ultra-shallow junction engineering based on millisecond annealing for sub-30 nm gate length planar bulk CMOSFET;Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08);2008-05
2. A two-dimensional B implantation model for semiconductor process simulation environments;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06
3. THE EFFECT OF A SCREENING OXIDE ON ION IMPLANTATION STUDIED BY MONTE CARLO SIMULATIONS;COMPEL - The international journal for computation and mathematics in electrical and electronic engineering;1992-04