A highly manufacturable corner rounding solution for 0.18 μm shallow trench isolation-Reference-Cited by-同舟云学术

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A highly manufacturable corner rounding solution for 0.18 μm shallow trench isolation

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Container-title:International Electron Devices Meeting. IEDM Technical Digest
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Author:

Chang C.P.,Pai C.S.,Baumann F.H.,Liu C.T.,Rafferty C.S.,Pinto M.R.,Lloyd E.J.,Bude M.,Klemens F.P.,Miner J.F.,Cheung K.P.,Colonell J.I.,Lai W.Y.C.,Vaidya H.,Hillenius S.J.,Liu R.C.,Clemens J.T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/5237/14153/00650470.pdf?arnumber=650470

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliability challenges in CMOS technology: A manufacturing process perspective;Microelectronic Engineering;2023-09

2. A Novel Method for STI Top Corner Rounding by Etch Process to Improve Leakage and SRAM Performance;2019 China Semiconductor Technology International Conference (CSTIC);2019-03

3. Plasma etching: Yesterday, today, and tomorrow;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-09

4. Ar Annealing for Suppression of Gate Oxide Thinning at Shallow Trench Isolation Edge;IEEE Electron Device Letters;2007-07

5. A New Technique for Measuring Gate-Oxide Leakage in Charging Protected MOSFETs;IEEE Transactions on Electron Devices;2007-04

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