Novel one-step RTP Ti salicide process with low sheet resistance 0.06 μm gates and high drive current
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx3/5237/14153/00649476.pdf?arnumber=649476
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Self-Aligned Asymmetric Metal–Oxide–Semiconductor Field Effect Transistors Fabricated on Silicon-on-Insulator;Japanese Journal of Applied Physics;2009-09-24
2. Grain size analysis of C54–TiSi2 under different processing conditions for deep-submicron polycrystalline silicon gate length;Journal of Applied Physics;2003-10
3. The Effect of Al Interlayer on TiSi2Formation;Japanese Journal of Applied Physics;2001-06-15
4. Arsenic Redistribution during Rapid Thermal Chemical Vapor Deposition of TiSi[sub 2] on Si;Journal of The Electrochemical Society;2001
5. Salicides;Encyclopedia of Materials: Science and Technology;2001
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