Surface-Potential-Based Analytical Model of Low-Frequency Noise for Planar-Type Tunnel Field-Effect Transistors-Reference-Cited by-同舟云学术

Surface-Potential-Based Analytical Model of Low-Frequency Noise for Planar-Type Tunnel Field-Effect Transistors

Published:2021-08 Issue:8 Volume:68 Page:4051-4056
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Park Yeong-Hun,Yi Boram^ORCID,Kim Seung-Hwan,Shim Ju-Hyun,Song Hyeong-Sub,Song Hyun-Dong,Shin Hyun-Jin^ORCID,Lee Hi-Deok^ORCID,Yang Ji-Woon^ORCID

Funder

Ministry of Trade, Industry and Energy (MOTIE) and the Korea Semiconductor Research Consortium (KSRC) Support Program for the Development of the Future Semiconductor Device

National Research Foundation of Korea

Korea Government

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9493680/09459190.pdf?arnumber=9459190

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1. A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect;IEEE Transactions on Electron Devices;2023-03

2. Total-Ionizing-Dose Effects in Nanotube Tunnel Field-Effect Transistor with Bias-Induced Electron-Hole Bilayer;2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT);2022-10-25

3. High On-state Current P-type Tunnel Effect Transistor Based on The Doping Modulation;Chinese Physics B;2022-10-21

4. Parameters optimization for pin-Tunnel-FETs;2021 International Semiconductor Conference (CAS);2021-10-06