Analysis of the Effect of Residual Holes on Lateral Migration During the Retention Operation in 3-D NAND Flash Memory
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9632442/09594075.pdf?arnumber=9594075
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Systematic Analysis of Spacer and Gate Length Scaling on Memory Characteristics in 3D NAND Flash Memory;Applied Sciences;2024-07-31
2. Time Constant Analysis of Lateral Charge Loss in 3-D NAND Flash Memories Through Multiscale Simulations;IEEE Transactions on Electron Devices;2024-07
3. A Novel Structure Between WL Spaces to Improve the Retention Characteristics in 3D NAND Flash;IEEE Access;2024
4. Decomposition of Vertical and Lateral Charge Loss in Long-term Retention of 3-D NAND Flash Memory;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
5. Impact of Trapped Charge Vertical Loss and Lateral Migration on Lifetime Estimation of 3-D NAND Flash Memories;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
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