Utilizing Valley-Spin Hall Effect in Monolayer WSe₂ for Designing Low Power Nonvolatile Spintronic Devices and Flip-Flops

Author:

Cho KaramORCID,Liu Xiangkai,Chen ZhihongORCID,Gupta Sumeet KumarORCID

Funder

NEW materials for LogIc Memory and InTerconnectS NEWLIMITS Center funded by the Semiconductor Research Corporation SRC National Institute of Standards and Technology NIST

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. XNOR-VSH: A Valley-Spin Hall Effect-Based Compact and Energy-Efficient Synaptic Crossbar Array for Binary Neural Networks;IEEE Journal on Exploratory Solid-State Computational Devices and Circuits;2023-12

2. Design of behavior prediction model of molybdenum disulfide magnetic tunnel junctions using deep networks;Semiconductor Science and Technology;2023-07-05

3. Valley-Spin Hall Effect-Based Nonvolatile Memory With Exchange-Coupling-Enabled Electrical Isolation of Read and Write Paths;IEEE Journal on Exploratory Solid-State Computational Devices and Circuits;2022-12

4. Foreword Special Issue on Spintronics-Devices and Circuits;IEEE Transactions on Electron Devices;2022-04

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