Device characteristics of the 3-d bicmos technology using selective epitaxial growth and lateral solid phase epitaxy
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Published:2002-12
Issue:12
Volume:49
Page:2359-2362
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ISSN:0018-9383
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Container-title:IEEE Transactions on Electron Devices
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language:en
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Short-container-title:IEEE Trans. Electron Devices
Author:
Haitao Liu ,Kumar M.,Sin J.K.O.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials