Improved temperature-dependent performances of a novel InGaP-InGaAs-GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)-Reference-Cited by-同舟云学术

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Improved temperature-dependent performances of a novel InGaP-InGaAs-GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)

Published:2002-10 Issue:10 Volume:49 Page:1687-1693
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Kuo-Hui Yu ,Hung-Ming Chuang ,Kun-Wei Lin ,Shiou-Ying Cheng ,Chin-Chuan Cheng ,Jing-Yuh Chen ,Wen-Chau Liu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/22234/01036074.pdf?arnumber=1036074

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of Temperature Effect on MOS-HEMT Small-Signal Parameters;Lecture Notes in Electrical Engineering;2021-09-10

2. Thermal Sensitivity of Microwave Pseudomorphic High‐Electron‐Mobility Transistor Performance: Pre and Post Multilayer Technology;physica status solidi (a);2021-07-30

3. Research on Flexible GaInP/GaInAs/Ge/Bi2Te3/Sb2Te3 PV-TE Integrated Systems;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2019-08

4. Electron Mobility in Al x Ga1−x As Based Square-Parabolic Double Quantum Well HEMT Structure − Effect of Asymmetric Doping Profile;physica status solidi (b);2017-08-23

5. Thermal Influence on Multibias Small- and Large-Signal Parameters of GaAs pHEMT Fabricated in Multilayer 3-D MMIC;IEEE Transactions on Electron Devices;2017-04

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