Oxide roughness effect on tunneling current of MOS diodes-Reference-Cited by-同舟云学术

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Oxide roughness effect on tunneling current of MOS diodes

Published:2002-12 Issue:12 Volume:49 Page:2204-2208
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Hsu B.-C.,Chen K.-F.,Lai C.-C.,Lee S.W.,Liu C.W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/26455/01177985.pdf?arnumber=1177985

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of interface dipole on channel engineering and on direct tunneling current in double gate MOSFET;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2020-06-15

2. Metal gate electrode, channel and gate oxide engineering to improve DC and analog/RF performance of double-gate MOSFET for high-speed applications;Applied Physics A;2020-05-08

3. Direct Observation of the Tunneling Phenomenon in Organometal Halide Perovskite Solar Cells and Its Influence on Hysteresis;ACS Energy Letters;2018-10-16

4. Surface Chemical Composition and Morphology;Handbook of Silicon Wafer Cleaning Technology;2018

5. Si Surface Orientation Dependence on the Electrical Characteristics of HfN Gate Insulator with sub-0.5 nm EOT Formed by ECR Plasma Sputtering;MRS Proceedings;2014

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