Steep channel profiles in n/pMOS controlled by boron-doped Si:C layers for continual bulk-CMOS scaling-Reference-Cited by-同舟云学术

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Steep channel profiles in n/pMOS controlled by boron-doped Si:C layers for continual bulk-CMOS scaling

Published:2009-12 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE International Electron Devices Meeting (IEDM)
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Author:

Hokazono A.,Itokawa H.,Mizushima I.,Kawanaka S.,Inaba S.,Toyoshima Y.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5419306/5424206/05424250.pdf?arnumber=5424250

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Electrical Characteristics of Vertical Junction Si n-Type Tunnel FET;IEEE Transactions on Electron Devices;2018-12

2. Electron mobility enhancement in (100) oxygen-inserted silicon channel;Applied Physics Letters;2015-09-21

3. Extension of Planar Bulk n-Channel MOSFET Scaling With Oxygen Insertion Technology;IEEE Transactions on Electron Devices;2014-09

4. Improved device variability in scaled MOSFETs with deeply retrograde channel profile;Microelectronics Reliability;2014-06

5. 25-nm Gate Length nMOSFET With Steep Channel Profiles Utilizing Carbon-Doped Silicon Layers (A P-Type Dopant Confinement Layer);IEEE Transactions on Electron Devices;2011-05

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