The integration of proton bombardment process into the manufacturing of mixed-signal/RF chips-Reference-Cited by-同舟云学术

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The integration of proton bombardment process into the manufacturing of mixed-signal/RF chips

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Container-title:IEEE International Electron Devices Meeting 2003
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Author:

Tang D.D.,Lin W.C.,Lai L.S.,Wang C.H.,Lee L.P.,Hsu H.M.,Wu C.M.,Chang C.W.,Lien W.Y.,Chao C.P.,Lee C.Y.,Chern G.J.,Guo J.C.,Chang C.S.,Sun Y.C.,Du D.S.,Lan K.C.,Lin L.F.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8960/28396/01269370.pdf?arnumber=1269370

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dual-Layer Proton Irradiation for Passive Component Enhancement and Noise Coupling Suppression on CMOS Process;IEEE Transactions on Electron Devices;2024-08

2. The impacts of localized backside etching on proton radiation response in SOI passive devices;Japanese Journal of Applied Physics;2023-02-01

3. 300GHz Band On-Chip Vivaldi Antenna on Dual-Layer Proton Irradiated CMOS Si Substrate;2021 IEEE Asia-Pacific Microwave Conference (APMC);2021-11-28

4. Dual-Layer Proton Irradiation for Creating Thermally-Stable High-Resistivity Region in Si CMOS Substrate;ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC);2021-09-13

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