Al/sub 0.3/Ga/sub 0.7/N/GaN composite-channel HEMTs with enhanced linearity
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/9719/30682/01419299.pdf?arnumber=1419299
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A review on GaN HEMTs: nonlinear mechanisms and improvement methods;Journal of Semiconductors;2023-12-01
2. Investigation of multi-fingers drain field plate in dual-threshold coupling AlGaN/GaN high electron mobility transistors for optimizing linearity at high electrical fields in the Ka band;Semiconductor Science and Technology;2023-08-03
3. Improved mobility in InAlN/AlGaN two-dimensional electron gas heterostructures with an atomically smooth heterointerface;Japanese Journal of Applied Physics;2018-03-12
4. Numerical and experimental analyses of two-dimensional electron mobility in Al(In,Ga)N/AlGaN heterostructures;Applied Physics Express;2015-04-30
5. Nearly lattice-matched InAlN/AlGaN two-dimensional electron gas heterostructures grown by metalorganic chemical vapor deposition;Applied Physics Express;2015-01-21
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