Long-retention ferroelectric-gate FET with a (HfO/sub 2/)/sub x/(Al/sub 2/O/sub 3/)/sub 1-x buffer-insulating layer for 1T FeRAM
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/9719/30682/01419331.pdf?arnumber=1419331
Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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