SiGe HBT technology with f/sub max//f/sub T/ = 350/300 GHz and gate delay below 3.3 ps-Reference-Cited by-同舟云学术

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SiGe HBT technology with f/sub max//f/sub T/ = 350/300 GHz and gate delay below 3.3 ps

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Container-title:IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.
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Author:

Khater M.,Rieh J.-S.,Adam T.,Chinthakindi A.,Johnson J.,Krishnasamy R.,Meghelli M.,Pagette F.,Sanderson D.,Schnabel C.,Schonenberg K.T.,Smith P.,Stein K.,Stricker A.,Jeng S.-J.,AhIgren D.,Freeman G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9719/30682/01419122.pdf?arnumber=1419122

Cited by 60 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiGe HBTs in 90nm BiCMOS Technology Demonstrating fT/fMAX 285GHz/475GHz through Simultaneous Reduction of Base Resistance and Extrinsic Collector Capacitance;ECS Transactions;2014-08-12

2. A Novel Approach to Isolating the Edge of the Shallow Trench Isolation in SiGe HBTs for Improved Device Performance;ECS Transactions;2014-08-12

3. SiGe HBT Technology Based on a 0.13- $\mu{\rm m}$ Process Featuring an ${f}_{\rm MAX}$ of 325 GHz;IEEE Journal of the Electron Devices Society;2014-07

4. A Self-Aligned Sacrificial Emitter Process for High Performance SiGe HBT in BiCMOS;ECS Transactions;2013-03-15

5. (Invited) Advanced Transistor Architectures for Half-Terahertz SiGe HBTs;ECS Transactions;2013-03-15

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