A Comprehensive Atomic Study of Carbon Nanotube Schottky Diode Using First Principles Approach-Reference-Cited by-同舟云学术

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A Comprehensive Atomic Study of Carbon Nanotube Schottky Diode Using First Principles Approach

Published:2007 Issue: Volume: Page:
ISSN:
Container-title:2007 IEEE International Electron Devices Meeting
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Author:

Bai Ping,Lam Kai Tak,Li Erping,Chang Ken Kai-fu

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4418847/4418848/04419055.pdf?arnumber=4419055

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrically Doped Nanoscale Devices Using First-Principle Approach: A Comprehensive Survey;Nanoscale Research Letters;2021-01-29

2. Circuit Level Modeling of Electrically Doped Adenine–Thymine Nanotube Based Field Effect Transistor;IEEE Access;2020

3. A first principle approach toward circuit level modeling of electrically doped gated diode from single wall thymine nanotube-like structure;Microsystem Technologies;2018-03-09

4. A First Principle Approach to Design Gated p-i-n Nanodiode;Journal of Nano Research;2015-11

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