Field emitter arrays for low voltage applications with sub 100 nm apertures and 200 nm period-Reference-Cited by-同舟云学术

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Field emitter arrays for low voltage applications with sub 100 nm apertures and 200 nm period

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Container-title:International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)
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Author:

Pflug D.G.,Schattenburg M.,Smith H.I.,Akinwande A.I.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7704/21092/00979461.pdf?arnumber=979461

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Proposal of Field-Emission Device Capped with an Insulator Film and Aspects of Expected Performance;ECS Journal of Solid State Science and Technology;2022-11-01

2. Nanoscale silicon field emitter arrays with self-aligned extractor and focus gates;Nanotechnology;2020-06-02

3. Stable and environment-hard vacuum nanoelectronic devices for aerospace applications;IOP Conference Series: Materials Science and Engineering;2019-02-13

4. Stable, ruggedized, and nanometer-order size transfer mold field emitter array in harsh oxygen radical environment;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-05

5. Scaling of High-Aspect-Ratio Current Limiters for the Individual Ballasting of Large Arrays of Field Emitters;IEEE Transactions on Electron Devices;2012-09

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