Remarkable Breakdown Voltage Enhancement in AlGaN Channel HEMTs
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4418847/4418848/04418956.pdf?arnumber=4418956
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High drain-current-density and high breakdown-field Al0.36Ga0.64N-channel heterojunction field-effect transistors with a dual AlN/AlGaInN barrier layer;Japanese Journal of Applied Physics;2022-02-16
2. Improved on-state performance in AlGaN-channel heterojunction field-effect transistors with a quaternary AlGaInN barrier layer and a selectively grown n++-GaN contact layer;Materials Science in Semiconductor Processing;2021-10
3. Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm;IEEE Electron Device Letters;2019-08
4. High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator;Journal of Vacuum Science & Technology B;2019-07
5. Epitaxial growth of III-nitride electronic devices;III-Nitride Electronic Devices;2019
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