Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/ stack-Reference-Cited by-同舟云学术

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Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/ stack

Published: Issue: Volume: Page:
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Container-title:IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.
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Author:

Tseng H.-H.,Capasso C.C.,Schaeffer J.K.,Hebert E.A.,Tobin P.J.,Gilmer D.C.,Triyoso D.,Ramon M.E.,Kalpat S.,Luckowski E.,Taylor W.J.,Jeon Y.,Adetutu O.,Hegde R.I.,Noble R.,Jahanbani M.,Chemali C.E.,White B.E.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9719/30682/01419303.pdf?arnumber=1419303

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