Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention-Reference-Cited by-同舟云学术

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Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention

Published:2007-12 Issue: Volume: Page:
ISSN:
Container-title:2007 IEEE International Electron Devices Meeting
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Author:

Morikawa T.,Moriya H.,Iwasaki T.,Matsuoka M.,Nitta F.,Moniwa M.,Koga T.,Takaura N.,Kurotsuchi K.,Kinoshita M.,Matsuzaki N.,Matsui Y.,Fujisaki Y.,Hanzawa S.,Kotabe A.,Terao M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4418847/4418848/04418932.pdf?arnumber=4418932

Cited by 52 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Essential Characteristics of Memristors for Neuromorphic Computing;Advanced Electronic Materials;2022-10-25

3. Growth, Electronic and Electrical Characterization of Ge-Rich Ge–Sb–Te Alloy;Nanomaterials;2022-04-13

4. Enhanced performance of phase change memory by grain size reduction;Journal of Materials Chemistry C;2022

5. Thermal-Aware Compilation of Spiking Neural Networks to Neuromorphic Hardware;Languages and Compilers for Parallel Computing;2022

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