Evidence of the Thermo-Electric Thomson Effect and Influence on the Program Conditions and Cell Optimization in Phase-Change Memory Cells-Reference-Cited by-同舟云学术

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Evidence of the Thermo-Electric Thomson Effect and Influence on the Program Conditions and Cell Optimization in Phase-Change Memory Cells

Published:2007 Issue: Volume: Page:
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Container-title:2007 IEEE International Electron Devices Meeting
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Author:

Castro D. Tio,Goux L.,Hurkx G.A.M,Attenborough K.,Delhougne R.,Lisoni J.,Jedema F.J.,Zandt M.A.A. in `t,Wolters R.A.M.,Gravesteijn D.J.,Verheijen M.A.,Kaiser M.,Weemaes R.G.R.,Wouters D.J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4418847/4418848/04418934.pdf?arnumber=4418934

Cited by 54 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Parallel Integration of Nanoscale Atomic Layer Deposited Ge₂Sb₂Te₅ Phase-Change Memory with an Indium Gallium Zinc Oxide Thin-Film Transistor;ACS Applied Electronic Materials;2023-03-06

2. Modeling Reset, Set, and Read Operations in Nanoscale Ge₂Sb₂Te₅ Phase‐Change Memory Devices Using Electric Field‐ and Temperature‐Dependent Material Properties;physica status solidi (RRL) – Rapid Research Letters;2023-02-11

3. Phase change memory materials and their applications;Russian Chemical Reviews;2022

4. Incorporation of GTR (generation–transport–recombination) in semiconductor simulations;Journal of Applied Physics;2021-02-07

5. State dependence and temporal evolution of resistance in projected phase change memory;Scientific Reports;2020-05-19

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