70-nm impact-ionization metal-oxide-semiconductor (I-MOS) devices integrated with tunneling field-effect transistors (TFETs)
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/10701/33791/01609519.pdf?arnumber=1609519
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. RF and linearity distortion performance estimation of dopingless symmetric tunnel FET (DLSTFET);International Journal of Electronics;2022-02-11
2. Modified GRNN based atomic modeling approach for nanoscale devices and TFET implementation;Materials Today Communications;2021-06
3. A Novel Self-Aligned Dopingless Symmetric Tunnel Field Effect Transistor (DL-STFET): A Process Variations Tolerant Design;Silicon;2020-11-10
4. Influence of Source Stack and Heterogeneous Gate Dielectric on Band to Band Tunneling Rate of Tunnel FET;Silicon;2019-11-01
5. A Split-Gate Positive Feedback Device With an Integrate-and-Fire Capability for a High-Density Low-Power Neuron Circuit;Frontiers in Neuroscience;2018-10-09
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