Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress-Reference-Cited by-同舟云学术

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Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress

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Container-title:IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
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Sozza A.,Dua C.,Morvan E.,diForte-Poisson M.A.,Delage S.,Rampazzo F.,Tazzoli A.,Danesin F.,Meneghesso G.,Zanoni E.,Curutchet A.,Malbert N.,Labat N.,Grimbert B.,De Jaeger J.-C.

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IEEE

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http://xplorestaging.ieee.org/ielx5/10701/33791/01609416.pdf?arnumber=1609416

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Flexible Setup for Dynamic On-State Resistance Measurements of GaN HEMTs With One-Factor-at-a-Time Capability;IEEE Transactions on Power Electronics;2024-06

2. Virtual-Body p-GaN Gate HEMT With Enhanced Ruggedness Against Hot-Electron-Induced Degradation;IEEE Electron Device Letters;2024-05

3. A Systematic Characterization Method for Time-resolved Stability and Reliability Issues on Lateral GaN Power Devices;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

4. Normally-OFF p-GaN Gate Double-Channel HEMT With Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation;IEEE Electron Device Letters;2022-09

5. Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy;Semiconductor Science and Technology;2022-08-08

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