Capacitance enhancement techniques for sub-100 nm trench DRAMs-Reference-Cited by-同舟云学术

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Capacitance enhancement techniques for sub-100 nm trench DRAMs

Published: Issue: Volume: Page:
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Container-title:International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)
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Author:

Gutsche M.,Seidl H.,Luetzen J.,Birner A.,Hecht T.,Jakschik S.,Kerber M.,Leonhardt M.,Moll P.,Pompl T.,Reisinger H.,Rongen S.,Saenger A.,Schroeder U.,Sell B.,Wahl A.,Schumann D.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7704/21092/00979524.pdf?arnumber=979524

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Group IV Transition Metal (M = Zr, Hf) Precursors for High-κ Metal Oxide Thin Films;Inorganic Chemistry;2021-11-23

2. Critical parameters of high performance metal-insulator-metal nanocapacitors: A review;Materials Research Express;2019-11-20

3. Radiation-Induced Soft Errors;VLSI Design and Test for Systems Dependability;2018-07-21

4. Atomic Layer Deposition of Aluminum Oxide for Surface Passivation of InGaAs∕InP Heterojunction Bipolar Transistors;Journal of The Electrochemical Society;2011

5. Highly conformal atomic layer deposition of tantalum oxide using alkylamide precursors;Thin Solid Films;2003-10

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