A Deep-Learning Based BSIM-CMG FinFET Modeling and Parameter Extraction Approach-Reference-Cited by-同舟云学术

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A Deep-Learning Based BSIM-CMG FinFET Modeling and Parameter Extraction Approach

Published:2024-01-13 Issue: Volume: Page:185-188
ISSN:
Container-title:2024 International Conference on Electronic Engineering and Information Systems (EEISS)
language:
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Author:

Liu Yansen¹,Liu Xiaonian¹,Cao Peng¹

Affiliation:

1. Hunan Normal University Key Laboratory of Physics and Devices in Post-Moore Era, College of Hunan Province,School of Physics and Electronics,Changsha,China,410081

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10606969/10607399/10607508.pdf?arnumber=10607508

Reference17 articles.

1. A Novel 25-nm Modified Schottky-Barrier FinFET With High Performance

2. Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs

3. Short-channel effect in fully depleted SOI MOSFETs

4. Deep Learning-Based BSIM-CMG Parameter Extraction for 10-nm FinFET

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