Native-Conflict and Stitch-Aware Wire Perturbation for Double Patterning Technology-Reference-Cited by-同舟云学术

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Native-Conflict and Stitch-Aware Wire Perturbation for Double Patterning Technology

Published:2012-05 Issue:5 Volume:31 Page:703-716
ISSN:0278-0070
Container-title:IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
language:
Short-container-title:IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

Author:

Shao-Yun Fang ,Szu-Yu Chen ,Yao-Wen Chang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Software

Link

http://xplorestaging.ieee.org/ielx5/43/6185728/06186851.pdf?arnumber=6186851

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. CRMA: Incorporating Cut Redistribution With Mask Assignment to Enable the Fabrication of 1-D Gridded Design;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2018-10

2. An Effective Layout Decomposition Method for DSA with Multiple Patterning in Contact-Hole Generation;ACM Transactions on Design Automation of Electronic Systems;2017-10-17

3. Discrete Relaxation Method for Triple Patterning Lithography Layout Decomposition;IEEE Transactions on Computers;2017-02-01

4. Incorporating cut redistribution with mask assignment to enable 1D gridded design;Proceedings of the 35th International Conference on Computer-Aided Design;2016-11-07

5. Layout Decomposition Co-Optimization for Hybrid E-Beam and Multiple Patterning Lithography;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2016-09

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