Recovery of hot-carrier damage in reoxidized nitrided oxide MOSFET's
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/55/3883/00144944.pdf?arnumber=144944
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hot-Carrier Degradation in Decananometer CMOS Nodes: From an Energy-Driven to a Unified Current Degradation Modeling by a Multiple-Carrier Degradation Process;Hot Carrier Degradation in Semiconductor Devices;2014-10-04
2. Hot-Carrier acceleration factors for low power management in DC-AC stressed 40nm NMOS node at high temperature;2009 IEEE International Reliability Physics Symposium;2009
3. Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs;Microelectronics Reliability;2005-09
4. Instabilities in gate-controlled-diode characteristics of n-MOSFETs following hot-carrier injection;Semiconductor Science and Technology;1997-11-01
5. Rapid thermal post-metallization annealing effect on thin gate oxides;Applied Surface Science;1996-02
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