Stress induced failure analysis by stress measurements in copper dual damascene interconnects-Reference-Cited by-同舟云学术

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Stress induced failure analysis by stress measurements in copper dual damascene interconnects

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Container-title:Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519)
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Author:

Suzuki T.,Ohtsuka S.,Yamanoue A.,Hosoda T.,Khono T.,Matsuoka Y.,Yanai K.,Matsuyama H.,Mori H.,Shimizu N.,Nakamura T.,Sugatani S.,Shono K.,Yagi H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7918/21830/01014942.pdf?arnumber=1014942

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Voiding generation in copper interconnect under room temperature storage in 12 years;Japanese Journal of Applied Physics;2017-06-20

2. Local distribution of residual stress of Cu in LSI interconnect;Materials Letters;2014-12

3. Prediction of Stress Induced Voiding Reliability in Cu Damascene Interconnect by Computer Aided Vacancy Migration Analysis;Japanese Journal of Applied Physics;2011-05-20

4. Numerical Analysis of Vacancy Transport by Residual Stress in Electromigration on LSI Interconnects;Japanese Journal of Applied Physics;2010-02-22

5. New Degradation Phenomena of Stress-Induced Voiding Inside via in Copper Interconnects;2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual;2007-04

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