Differential Cancellation Based RF Switch Enabling High Isolation and Minimal Insertion Loss in 0.0006 mm<sup>2</sup> Area-Reference-Cited by-同舟云学术

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Differential Cancellation Based RF Switch Enabling High Isolation and Minimal Insertion Loss in 0.0006 mm² Area

Published:2022-04-19 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)
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Author:

Forbes Travis¹,Saugen Justine¹,Magstadt Benjamin¹

Affiliation:

1. Sandia National Laboratories,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9866075/9866092/09866179.pdf?arnumber=9866179

Reference4 articles.

1. A 5G 28-GHz Common-Leg T/R Front-End in 45-nm CMOS SOI With 3.7-dB NF and −30-dBc EVM With 64-QAM/500-MBaud Modulation

2. RF Watt-Level Low-Insertion-Loss High-Bandwidth SOI CMOS Switches

3. A Passive I/Q Millimeter-Wave Mixer and Switch in 45-nm CMOS SOI

4. A 100 W, UHF to S-Band RF Switch in the Super-Lattice Castellated Field Effect Transistor (SLCFET) 3S Process

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