On the use of Po210and Am241 collimated alpha sources for the characterization of the onset of carrier multiplication in power devices-Reference-Cited by-同舟云学术

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On the use of Po210and Am241 collimated alpha sources for the characterization of the onset of carrier multiplication in power devices

Published:2020-07-20 Issue: Volume: Page:
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Container-title:2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
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Author:

Ciappa Mauro,Pocaterra Marco

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9260488/9260588/09260952.pdf?arnumber=9260952

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel Non-Invasive Cryostatic Spectrometry Technique to Characterize the Carriers’ Multiplication Factor in Silicon Carbide Power Devices;Materials Science Forum;2023-06-05

2. Characterization of the carriers' multiplication in Si and SiC power devices by soft-gamma irradiation under cryostatic conditions;Microelectronics Reliability;2022-11

3. Design and Development Of Scintillation – Based Gamma Dosimeter Using SIPM Detector;2022 IEEE 2nd Mysore Sub Section International Conference (MysuruCon);2022-10-16

4. TCAD investigation of the transport of carriers deposited by alpha particles in silicon carbide power Schottky devices;Microelectronics Reliability;2021-11

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