Next generation 600V CSTBT™ with an advanced fine pattern and a thin wafer process technologies-Reference-Cited by-同舟云学术

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Next generation 600V CSTBT™ with an advanced fine pattern and a thin wafer process technologies

Published:2012-06 Issue: Volume: Page:
ISSN:
Container-title:2012 24th International Symposium on Power Semiconductor Devices and ICs
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Author:

Honda Shigeto,Haraguchi Yuki,Narazaki Atsushi,Terashima Tomohide,Terasaki Yoshiaki

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6222389/6228999/06229045.pdf?arnumber=6229045

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel High-Speed Split-Gate Trench Carrier-Stored Trench-Gate Bipolar Transistor with Enhanced Short-Circuit Roughness;Micromachines;2024-05-22

2. 3rd Gen. RC-IGBT Technology Contributing to a Decarbonized Society;IEEJ Transactions on Electronics, Information and Systems;2024-03-01

3. Carrier Stored Trench-Gate Bipolar Transistor With Stepped Split Trench-Gate Structure;IEEE Transactions on Electron Devices;2022-10

4. Carrier Stored Layer Density Effect Analysis of Radiated Noise at Turn-On Switching via Gabor Wavelet Transform;IEEE Transactions on Electron Devices;2021-04

5. Suppression Strategy of Snapback Effect for Multi-Cell RC-IGBT;2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia);2020-11-29

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