Temperature dependence of the on-state voltage drop in field-stop IGBTs-Reference-Cited by-同舟云学术

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Temperature dependence of the on-state voltage drop in field-stop IGBTs

Published:2018-05 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Maresca L.,Riccio M.,Breglio G.,Irace A.,Mirone P.,Sanfilippo C.,Merlin L.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8387225/8393579/08393623.pdf?arnumber=8393623

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dual injection enhanced planar gate IGBT with self-adaptive hole path for better trade-off and higher SOA capability;Semiconductor Science and Technology;2022-10-14

2. Temperature Dependence of Pulsed Power Performance of Insulated Gate Trigger Thyristor;IEEE Transactions on Electron Devices;2022-03

3. Comparison of Short-Circuit Safe Operating Areas Between the Conventional Field-Stop IGBT and the Superjunction Field-Stop IGBT;IEEE Journal of the Electron Devices Society;2022

4. Low Loss and Low EMI Noise CSTBT With Split Gate and Recessed Emitter Trench;IEEE Journal of the Electron Devices Society;2021

5. Comparative Study of Temperature Sensitive Electrical Parameters for Junction Temperature Monitoring in SiC MOSFET and Si IGBT;2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia);2020-11-29

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