Comparison and optimization of edge termination techniques for SiC power devices-Reference-Cited by-同舟云学术

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Comparison and optimization of edge termination techniques for SiC power devices

Published: Issue: Volume: Page:
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Container-title:Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216)
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Author:

Sheridan D.C.,Niu G.,Merrett J.N.,Cressler J.D.,Dufrene J.B.,Casady J.B.,Sankin I.

Publisher

Inst. Electr. Eng. Japan

Link

http://xplorestaging.ieee.org/ielx5/7438/20221/00934587.pdf?arnumber=934587

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. NiO junction termination extension for high-voltage (>3 kV) Ga2O3 devices;Applied Physics Letters;2023-05-01

2. Simulation of gradient floating field limiting rings for 4H-SiC power devices;Journal of Physics: Conference Series;2022-07-01

3. 6.5 kV SiC Power Devices with Improved Blocking Characteristics against Process Deviations;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2021-04-30

4. Design and Characteristics of an Etching Field Limiting Ring for 10kV SiC Power Device;2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS);2019-11

5. Multizone Gradient-Modulated Guard Ring Technique for Ultrahigh Voltage 4H-SiC Devices With Increased Tolerances to Implantation Dose and Surface Charges;IEEE Journal of Emerging and Selected Topics in Power Electronics;2019-09

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