Use of 300 mm magnetic Czochralski wafers for the fabrication of IGBTs-Reference-Cited by-同舟云学术

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Use of 300 mm magnetic Czochralski wafers for the fabrication of IGBTs

Published:2016-06 Issue: Volume: Page:
ISSN:
Container-title:2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Schulze H. J.,Ofner H.,Niedernostheide F.-J.,Laven J. G,Felsl H. P.,Voss S.,Schwagmann A.,Jelinek M.,Ganagona N.,Susiti A.,Wubben T.,Schustereder W.,Breymesser A.,Stadtmuller M.,Schulz A.,Kurz T.,Lukermann F.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7509008/7520753/07520851.pdf?arnumber=7520851

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Protocol for Thermal Donors Monitoring in High Resistivity Silicon Wafers;2024 35th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2024-05-13

2. Numerical modeling of FS-trench IGBTs by TCAD and its parameter extraction method;Microelectronics Reliability;2023-08

3. Evaluation of thermally activated defects behaviors in nitrogen-doped Czochralski silicon single crystals using deep level transient spectroscopy;Japanese Journal of Applied Physics;2023-07-01

4. Long-Term Stability of Novel Crucible Systems for the Growth of Oxygen-Free Czochralski Silicon Crystals;Crystals;2022-12-22

5. Silicon Power Devices;Springer Handbook of Semiconductor Devices;2022-11-11

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