Successful Development of 1.2 kV 4H-SiC MOSFETs with the Very Low On-Resistance of 5 mΩcm2-Reference-Cited by-同舟云学术

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Successful Development of 1.2 kV 4H-SiC MOSFETs with the Very Low On-Resistance of 5 mΩcm2

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Container-title:2006 IEEE International Symposium on Power Semiconductor Devices & IC's
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Author:

Miura N.,Fujihira K.,Nakao Y.,Watanabe T.,Tarui Y.,Kinouchi S.-i.,Imaizumi M.,Oomori T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/11050/34863/01666121.pdf?arnumber=1666121

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Discrete Channel Model to Estimate Threshold Voltage Deviation Induced by The Voltage Stress in SiC Short Channel MOSFETs;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

2. Power Loss Reduction of N-Channel 10-kV SiC IGBTs With Box Cell Layout;IEEE Transactions on Electron Devices;2023-07

3. Thin-drift-layer n-channel 4H-SiC IGBT with low switching loss and switching ringing reduction;Japanese Journal of Applied Physics;2022-07-15

4. Design and simulation of 3C-SiC vertical power MOSFETs;International Journal of Electronics;2020-09-13

5. Diamond power devices: state of the art, modelling, figures of merit and future perspective;Journal of Physics D: Applied Physics;2019-12-17

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