A Novel Programming Technique to Boost Low-Resistance State Performance in Ge-Rich GST Phase Change Memory-Reference-Cited by-同舟云学术

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A Novel Programming Technique to Boost Low-Resistance State Performance in Ge-Rich GST Phase Change Memory

Published:2014-05 Issue:5 Volume:61 Page:1246-1254
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kiouseloglou Athanasios,Navarro Gabriele,Sousa Veronique,Persico Alain,Roule Anne,Cabrini Alessandro,Torelli Guido,Maitrejean Sylvain,Reimbold Gilles,De Salvo Barbara,Clermidy Fabien,Perniola Luca

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6802373/06777323.pdf?arnumber=6777323

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Operando electrical biasing TEM experiments of Ge-rich GST thin films with FIB sample preparation;Journal of Alloys and Compounds;2024-10

2. Exploring the evolution of mass density and thickness of N-doped Ge-rich GeSbTe during multistep crystallization;Scientific Reports;2024-06-25

3. Growth of Textured Chalcogenide Thin Films and Their Functionalization through Confinement;physica status solidi (a);2024-04-09

4. Crystallization of Amorphous N‐Doped Ge‐Rich GST Layers Deposited on a Polycrystalline GST Template;physica status solidi (RRL) – Rapid Research Letters;2024-02-07

5. Atomic Layer Deposition of GeSb₂Te₄ Thin Films for Reliable Phase Change Memory With a High Dynamic Range;IEEE Electron Device Letters;2023-09

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