Characterization of Interconnect Process Variation in CMOS Using Electrical Measurements and Field Solver-Reference-Cited by-同舟云学术

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Characterization of Interconnect Process Variation in CMOS Using Electrical Measurements and Field Solver

Published:2014-05 Issue:5 Volume:61 Page:1255-1261
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lim Jun Jun,Johari Nor Adila,Rustagi Subhash C.,Arora Narain D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6802373/06784487.pdf?arnumber=6784487

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4. Stochastic Delay Characterization for Multicoupled RLC Interconnects Under Process Variations;Journal of Circuits, Systems and Computers;2019-08

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