Role of the amplifying gate in the turn-on process of involute structure thyristors

Author:

Sankaran V.A.,Hudgins J.L.,Portnoy W.M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Dynamic Electro-thermal Characteristics and Damage Analysis of Pulsed Thyristor;2024 IEEE International Conference on Plasma Science (ICOPS);2024-06-16

2. Power Semiconductor Devices: For Variable Speed Drives;IEEE Industry Applications Magazine;2012-07

3. Thyristors;Power Electronics Handbook;2007

4. MOS-gated thyristors (MCTs) for repetitive high power switching;IEEE Transactions on Power Electronics;2001-01

5. The use of thyristors for repetitive narrow pulse, high power switching;Conference Record of the 2000 Twenty-fourth International Power Modulator Symposium;2000

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