The Dependence of the Performance of Strained NMOSFETs on Channel Width-Reference-Cited by-同舟云学术

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The Dependence of the Performance of Strained NMOSFETs on Channel Width

Published:2009-11 Issue:11 Volume:56 Page:2848-2852
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yeh Lingyen,Liao Ming Han,Chen Chun Heng,Wu Jun,Lee Joseph Ya-min,Liu Chee Wee,Lee T. L.,Liang M. S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5290333/05280278.pdf?arnumber=5280278

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Performance characteristics of strained Ge p-FinFETs under the integration of lattice and self-heating stress enabled by process-oriented finite element simulation;Applied Physics Express;2021-02-23

3. Optimization of Dislocation Edge Stress Effects for Si N-Type Metal–Oxide–Semiconductor Field-Effect Transistors;Japanese Journal of Applied Physics;2013-04-01

4. The systematic study and simulation modeling on nano-level dislocation edge stress effects;Journal of Applied Physics;2012-04-15

5. Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor;Acta Physica Sinica;2010

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