Scaling Properties of $\hbox{Ge}$ –$\hbox{Si}_{x}\hbox{Ge}_{1 - x}$ Core–Shell Nanowire Field-Effect Transistors-Reference-Cited by-同舟云学术

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Scaling Properties of $\hbox{Ge}$ –$\hbox{Si}_{x}\hbox{Ge}_{1 - x}$ Core–Shell Nanowire Field-Effect Transistors

Published:2010-02 Issue:2 Volume:57 Page:491-495
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Nah Junghyo,Liu En-Shao,Varahramyan Kamran M.,Shahrjerdi Davood,Banerjee Sanjay K.,Tutuc Emanuel

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5393266/05353753.pdf?arnumber=5353753

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vertical Ge Gate-All-Around Nanowire pMOSFETs With a Diameter Down to 20 nm;IEEE Electron Device Letters;2020-04

2. Silicon and germanium nanowire electronics: physics of conventional and unconventional transistors;Reports on Progress in Physics;2017-04-10

3. Hole Mobility in Low-Doped Silicon Nanowires: An Atomistic Approach;The Journal of Physical Chemistry C;2015-05-13

4. Realization and Scaling of ${\rm Ge}{\hbox{--}}{\rm Si}_{1{\hbox{-}}{\rm x}}{\rm Ge}_{\rm x}$ Core-Shell Nanowire $n$-FETs;IEEE Transactions on Electron Devices;2013-12

5. Silicon–Germanium Nanowires: Chemistry and Physics in Play, from Basic Principles to Advanced Applications;Chemical Reviews;2013-11-22

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