A new high-sensitivity characterization method of interface stress at heterostructures by Cr-related luminescence-Reference-Cited by-同舟云学术

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A new high-sensitivity characterization method of interface stress at heterostructures by Cr-related luminescence

Published:1989-05 Issue:5 Volume:25 Page:1046-1052
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:
Short-container-title:IEEE J. Quantum Electron.

Author:

Nishino T.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx1/3/1152/00027998.pdf?arnumber=27998

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transition-Metal Impurity Luminescence in GaAs and its Application to Material Characterization;MRS Proceedings;1995

2. Optical characterization in microelectronics manufacturing;Journal of Research of the National Institute of Standards and Technology;1994-09

3. References;Optical Characterization of Semiconductors;1993

4. Study of ErAs/GaAs strained‐layer structures using optical absorption and ion channeling;Journal of Applied Physics;1990-09

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