High sensitivity InP-based monolithically integrated pin-HEMT receiver-OEIC's for 10 Gb/s-Reference-Cited by-同舟云学术

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High sensitivity InP-based monolithically integrated pin-HEMT receiver-OEIC's for 10 Gb/s

Published:1995 Issue:9 Volume:43 Page:2334-2341
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Kuebart W.,Reemtsma J.-H.,Kaiser D.,Grosskopf H.,Besca F.,Luz G.,Korber W.,Gyuro I.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx1/22/9222/00414577.pdf?arnumber=414577

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low‐cost InP–InGaAs PIN–HBT‐based OEIC for up to 20 Gb/s optical communication systems;IET Optoelectronics;2019-06

2. Sensitivity analysis of an HgCdTe based photovoltaic receiver for long-wavelength free space optical communication systems;Optoelectronics Letters;2009-01

3. CMOS device noise considerations for terabit lightwave systems;IEEE Transactions on Electron Devices;2006-04

4. A proposed ultra low-noise optical receiver for 1.55 mu m applications;Optical and Quantum Electronics;2003

5. Optical Photodetectors;Springer Series in Photonics;2001

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