RS-CIM: A Charge Domain Compute-in-Memory Architecture with Resolution Shifting ADC for Intelligent Perception Edge Nodes-Reference-Cited by-同舟云学术

RS-CIM: A Charge Domain Compute-in-Memory Architecture with Resolution Shifting ADC for Intelligent Perception Edge Nodes

Published:2023-10-20 Issue: Volume: Page:
ISSN:
Container-title:2023 8th International Conference on Integrated Circuits and Microsystems (ICICM)
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Author:

Liu Jiahui¹,Ren Erxiang¹,Zhu Guilin²,Luo Li¹,Liu Bo²,Wei Qi³,Yang Xinghua⁴,Qiao Fei⁵

Affiliation:

1. Beijing Jiaotong University,School of Electronic and Information Engineering,Beijing,China

2. Henan University of Science and Technology,School of Information Engineering,Luoyang,China

3. Tsinghua University,Department of Precision Instrument,Beijing,China

4. Beijing Forestry University,Department of Electronics and Information Technology,Beijing,China

5. Tsinghua University,Department of Electronic Engineering and BNRist,Beijing,China

Funder

National Natural Science Foundation of China

Research and Development

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10365709/10365561/10365980.pdf?arnumber=10365980

Reference21 articles.

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2. Enabling Lower-Power Charge-Domain Nonvolatile In-Memory Computing With Ferroelectric FETs

3. Senputing: An Ultra-Low-Power Always-On Vision Perception Chip Featuring the Deep Fusion of Sensing and Computing

4. MINIMIZING THE SUB THRESHOLD LEAKAGE FOR HIGH-PERFORMANCE CMOS CIRCUITS USING NOVEL STACKED SLEEP TRANSISTOR TECHNIQUE;Anjana;International Journal of Electrical and Electronic Engineering & Telecommunications,2012

5. Challenges and Trends of SRAM-Based Computing-In-Memory for AI Edge Devices